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Analysis of the source inductance effect on the power performance of high development HEMTs in the Ka-Band

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5 Author(s)
C. Gaquiere ; CNRS, Inst. d'Electron et de Microelectron. du Nord, Villeneuve d'Ascq, France ; B. Bonte ; D. Theron ; Y. Crosnier
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This paper provides an analysis of the power performance degradations of interdigitated HEMTs in millimeter wave range as the total gate width increases. It investigates the possibility of optimizing the device topology by combining a limited number of via holes and airbridge source connections in order to offer a good cost-performance trade off

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:5 ,  Issue: 8 )