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Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission

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2 Author(s)
C. W. Cullen ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; J. C. Sturm

We report the measurement of the temperature of metal-coated silicon wafers by a double-pass infrared transmission technique. Infrared light incident on the backside of the wafer passes through the wafer, and is re-emitted out the backside after reflecting off the metal surface on the front side of the wafer. The temperature is inferred by the change in the re-emitted signal due to absorption in the wafer. The work has been demonstrated on double-polished wafers from 100/spl deg/C to 550/spl deg/C using wavelengths from 1.1 to 1.55 /spl mu/m. A method for overcoming limitations of the present arrangement for wafers with a rough backside is proposed.<>

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:8 ,  Issue: 3 )