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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:16 Issue:8 Help

Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's

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6 Author(s)
Babcock, J.A. ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; Cressler, J.D. ; Vempati, L.S. ; Clark, S.D.
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The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported for the first time. Only minor degradation in the current-voltage characteristics of both SiGe HBT's and Si BJT's is observed after total radiation dose exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity to ionizing radiation exposure suggests that these SiGe HBT's are well suited for many applications requiring radiation tolerance. We have also observed the appearance of ionizing-radiation-induced generation-recombination (G/R) noise in some of these SiGe HBT's.<>

Published in:
Electron Device Letters, IEEE  (Volume:16 ,  Issue: 8 )

Date of Publication: Aug. 1995

Page(s):
351 - 353
ISSN :
0741-3106
INSPEC Accession Number:
5035261
Digital Object Identifier :
10.1109/55.400735
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Aug. 1995
Sponsored by :
IEEE Electron Devices Society

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