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Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's

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6 Author(s)
Babcock, J.A. ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; Cressler, J.D. ; Vempati, L.S. ; Clark, S.D.
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The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported for the first time. Only minor degradation in the current-voltage characteristics of both SiGe HBT's and Si BJT's is observed after total radiation dose exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity to ionizing radiation exposure suggests that these SiGe HBT's are well suited for many applications requiring radiation tolerance. We have also observed the appearance of ionizing-radiation-induced generation-recombination (G/R) noise in some of these SiGe HBT's.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 8 )