By Topic

MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
M. H. Leary ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; J. M. Ballantyne

This paper describes the design of two types of MSM photodetectors, one with interdigitated fingers running across a waveguide and one with electrodes running alongside the waveguide ridge. Both detectors employ the same layer structure as well-characterized high electron mobility transistors (HEMT's) for ease of integration. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors

Published in:

Journal of Lightwave Technology  (Volume:13 ,  Issue: 7 )