By Topic

High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Fouquet, J.E. ; Hewlett-Packard Co., Palo Alto, CA, USA ; Trott, G.R. ; Sorin, W.V. ; Ludowise, M.J.
more authors

A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 μm, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0°C) to produce nearly 1 mW of 1.5 μm emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements

Published in:

Quantum Electronics, IEEE Journal of  (Volume:31 ,  Issue: 8 )