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Uniform linear arrays of strained-layer InGaAs-AlGaAs quantum-well ridge-waveguide diode lasers fabricated by ECR-IBAE

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8 Author(s)
Woodhouse, J.D. ; Lincoln Lab., MIT, Lexington, MA, USA ; Wang, C.A. ; Donnelly, J.P. ; Tsang, D.Z.
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Uniform linear arrays of strained-layer multiple-quantum-well InGaAs-AlGaAs ridge-waveguide diode lasers have been fabricated that operate near 980 nm and have low threshold currents Ith and high differential quantum efficiencies ηd. Uniformity was achieved by a combination of uniform ion-beam-assisted etching with an electron cyclotron resonance ion source and uniform organometallic vapor-phase epitaxial (OMVPE) growth. We investigated the effects of device geometry, namely, ridge width, cavity length, and remaining cladding thickness outside the ridge t, on Ith and ηd. For uncoated lasers with 500-μm-long cavities, 2- to 3-μm-wide ridges, and t=165±75 nm fabricated in double-quantum-well OMVPE material, Ith was typically in the range 6-7 mA and ηd was >40% per facet. A 24-element array of 2-μm-wide, 200-μm-long ridge-waveguide lasers with a high reflection coating on the back facet exhibited excellent uniformity, with threshold currents and single-ended differential quantum efficiencies that averaged 3.4 mA and 72%, respectively. Similar arrays with high-reflectivity coatings on both facets exhibited threshold currents as low as 2 mA

Published in:

Quantum Electronics, IEEE Journal of  (Volume:31 ,  Issue: 8 )