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DC and RF performance of 0.15μm gate length In0.70Al 0.30As/ln0.80Ga0.20As HFETs on GaAs substrate

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5 Author(s)
Rorsman, N. ; Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden ; Karlsson, C. ; Wang, S.M. ; Zirath, H.
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The authors have studied the DC and microwave characteristics of 0.15 μm gate length In0.70Al0.30As/In0.80 Ga0.20As heterostructure field-effect transistors (HFETs) on GaAs substrate. A graded InAlGaAs buffer is used to accommodate the large lattice mismatch between the substrate and the channel. An intrinsic transit frequency of 140 GHz and a maximum frequency of oscillation of 200 GHz were obtained, which is the highest reported fmax for an InAlAs/InGaAs HFET lattice-mismatched on GaAs substrate

Published in:

Electronics Letters  (Volume:31 ,  Issue: 15 )

Date of Publication:

20 Jul 1995

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