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Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

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5 Author(s)
Loni, A. ; Defence Res. Agency, Great Malvern, UK ; Simons, A.J. ; Cox, T.I. ; Calcott, P.D.J.
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The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1%, under CW operation. The emission, which is broadband and peaks at 600 nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3 V, respectively

Published in:

Electronics Letters  (Volume:31 ,  Issue: 15 )