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Passive modelocking of 1.3μm semiconductor laser amplifier in loop mirror configuration

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5 Author(s)
Ammann, H. ; Inst. of Appl. Phys., Bern Univ., Switzerland ; Hodel, W. ; Weber, H.P. ; Holtmann, C.
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A passively mode-locked 1.3 μm InGaAsP/InP semiconductor laser amplifier in a fibre loop mirror configuration, is demonstrated for the first time, to the authors' knowledge. Pulse durations of <20 ps at repetition rates of 0.5-2 GHz, an average output power level in the order of 1 mW and a tuning range of 1300-1320 nm were achieved. The laser has the potential for integration on a single chip. which would result in a compact and high repetition rate source of picosecond pulses in the second communication window

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Electronics Letters  (Volume:31 ,  Issue: 15 )