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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:42 Issue:8 Help

On the nature of the defect passivation in polycrystalline silicon by hydrogen and oxygen plasma treatments

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3 Author(s)
Nickel, N.H. ; Xerox Palo Alto Res. Center, CA, USA ; Mei, P. ; Boyce, J.B.

The effect of hydrogen and oxygen plasmas on the properties of polycrystalline silicon films and thin-film transistors are investigated. The results clearly demonstrate that an oxygen plasma does not passivate grain boundary defects. However, an oxygen plasma treatment at 300 K still improves the electrical properties of thin-film transistors.

Published in:
Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 8 )

Date of Publication: Aug 1995

Page(s):
1559 - 1560
ISSN :
0018-9383
INSPEC Accession Number:
5018453
Digital Object Identifier :
10.1109/16.398672
Product Type:
Journals & Magazines
Date of Current Version :
06 February 2006
Issue Date :
Aug 1995
Sponsored by :
IEEE Electron Devices Society

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