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On the nature of the defect passivation in polycrystalline silicon by hydrogen and oxygen plasma treatments

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3 Author(s)
Nickel, N.H. ; Xerox Palo Alto Res. Center, CA, USA ; Mei, P. ; Boyce, J.B.

The effect of hydrogen and oxygen plasmas on the properties of polycrystalline silicon films and thin-film transistors are investigated. The results clearly demonstrate that an oxygen plasma does not passivate grain boundary defects. However, an oxygen plasma treatment at 300 K still improves the electrical properties of thin-film transistors.

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 8 )

Date of Publication:

Aug 1995

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