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High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess

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6 Author(s)
Wu, C.S. ; Microelectron. Div., Hughes Aircraft Co., Torrance, CA, USA ; Ren, F. ; Pearton, S.J. ; Hu, M.
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An optimized pseudomorphic high electron mobility transistor (PHEMT) epitaxial structure processed with a novel single gate recess technique is shown to achieve 850 mW of output power (760 mW·mm-1 saturated power density) with 50% power added efficiency at X-band when operated at a CW and nearly class A condition. The multi-finger devices (14×80 μm) retain high extrinsic transconductances (380-420 mS·mm-1), with exceptional breakdown voltage (>18 V). The combination of optimized epi layer structure design and uniform gate recess using a damage-free, etch-stop, dry plasma processing step produces consistently and uniformly high fT values (80 GHz at VDS=1 V, 35 GHz at VDS=7 V) even at low IDS (100 mA·mm-1).

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 8 )