By Topic

In-line, real-time nondestructive monitoring of Fe contamination for statistical process control (SPC) by surface photovoltage (SPV)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Lowell, J. ; Adv. Micro Devices, Austin, TX, USA ; Wenner, V. ; Thomas, J. ; Jastrzebski, L.
more authors

During high temperature operations, heavy metals will precipitate and form localized silicides at the silicon/oxide interface, which introduces weak spots that cause gate dielectric integrity and reliability problems. To address this issue real-time monitors of metallic concentration can be used to control contamination to an acceptable level. The technique of surface photovoltage (SPV) is a passive diagnostic which has been implemented into semiconductor manufacturing for this specific purpose. The application of SPV to actual cases in fabrication using SPC is discussed. This emphasizes the need to increase production control of overall metallic contamination for future CMOS technologies which is illustrated

Published in:

Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International

Date of Conference:

4-6 Oct 1993