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Neural network control of a plasma gate etch: Early steps in wafer-to-wafer process control

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3 Author(s)
Rietman, E.A. ; Bell Labs, Murray Hill, NJ, USA ; Patel, S. ; Lory, E.R.

A gate oxide thickness controller for a plasma etch reactor has been developed. This controller is for 0.9-μm technology. By monitoring certain processes, signatures are fed forward into a neural network trained by the backpropagation method. It is possible to predict in real time the correct over-etch time on a wafer-by-wafer basis. Computer simulations indicate that the neural network is equivalent to humans for this task. The uniqueness of this controller is compared with a previous controller for a 1.25-μm technology gate etch process

Published in:

Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International

Date of Conference:

4-6 Oct 1993

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