By Topic

Neural network control of a plasma gate etch: Early steps in wafer-to-wafer process control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
E. A. Rietman ; Bell Labs, Murray Hill, NJ, USA ; S. Patel ; E. Lory

A gate oxide thickness controller for a plasma etch reactor has been developed. This controller is for 0.9-μm technology. By monitoring certain processes, signatures are fed forward into a neural network trained by the backpropagation method. It is possible to predict in real time the correct over-etch time on a wafer-by-wafer basis. Computer simulations indicate that the neural network is equivalent to humans for this task. The uniqueness of this controller is compared with a previous controller for a 1.25-μm technology gate etch process

Published in:

Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International

Date of Conference:

4-6 Oct 1993