Referenced Items are not available for this document.
Switching speed, isolation, optical-source requirements, and attainable matrix dimensions of an optoelectronic matrix switch using Si p-i-n photodiodes are discussed. By charging the internal capacitance of the diode with a photocurrent, forward bias voltages are attained that establish off-states. The novel features of the matrix switch are that the switch elements have high output impedance at off-states, and no electrical power is required to establish the off-states. This leads to advantages in fabricating large-dimension matrix switches
Published in:
Lightwave Technology, Journal of
(Volume:6
,
Issue:
1
)
Date of Publication: Jan 1988
- Page(s):
- 131 - 138
- ISSN :
- 0733-8724
- INSPEC Accession Number:
- 3132228
- Digital Object Identifier :
- 10.1109/50.3977
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1988
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
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