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A transparent built-in self-test scheme for detecting single V-coupling faults in RAMs

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2 Author(s)
Cockburn, B.F. ; Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada ; Sat, Y.-F.N.

This paper describes a transparent built-in self-test (BIST) scheme for random-access memories (RAMs) that detects single V-coupling faults. Such faults-as defined by Nair, Thatte, and Abraham (1978)-can be used to model many standard fault types such as stuck bits, transition faults, coupling faults, and pattern sensitivities. Variations of the proposed scheme can generate near-deterministic tests for detecting single 2-, 3-, and 4-coupling faults; in addition, probabilistic tests can be generated to detect single V-coupling faults of arbitrary cell multiplicities V⩾2. The BIST scheme uses Nicolaidis' transformation to make the applied tests transparent; thus the data that was held in the RAM at the start of the test will be restored by the end of the test if no faults are present

Published in:

Memory Technology, Design and Testing, 1994., Records of the IEEE International Workshop on

Date of Conference:

8-9 Aug 1994