Referenced Items are not available for this document.
The fabrication, performance, and reliability of InP/InGaAsP ridge waveguide lasers emitting at 1.3 μm is described. The structure requires only one stage of planar wafer growth and simple fabrication steps and is therefore an inherently low-cost product. Threshold currents are typically 25-30 mA, and the external quantum efficiency is 20-25% per facet. Output power in the fundamental mode is maintained to above 10 mW, while total power in excess of 100-mW CW at 20° has been obtained. The life test data have been fitted to a power-law drift model to predict long-term behavior and is consistent with total lifetimes in excess of 25 years. The device is eminently suited for applications in high-reliability high-capacity fiber-optic communications systems
Published in:
Lightwave Technology, Journal of
(Volume:6
,
Issue:
1
)
Date of Publication: Jan 1988
- Page(s):
- 25 - 29
- ISSN :
- 0733-8724
- INSPEC Accession Number:
- 3132211
- Digital Object Identifier :
- 10.1109/50.3958
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1988
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
