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Superconducting-gate silicon field effect transistors

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3 Author(s)
Yang, Cary Y. ; Microelectron. Lab., Santa Clara Univ., CA, USA ; Qiao, Jianmin ; Pagaduan, Felino E.

A silicon field-effect transistor consisting of a superconducting yttrium barium copper oxide gate, an yttria-stabilized zirconia insulator layer, and p-type silicon substrate with phosphorous-implanted source/drain has been fabricated. The drain current-voltage characteristics at room temperature resemble results measured from a metal-oxide silicon field effect transistor. The key to this similarity lies in the existence of the interfacial silicon oxide layer between the gate insulator/buffer and silicon

Published in:

Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong

Date of Conference:

18 Jul 1994

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