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An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication]

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3 Author(s)
Nakatsugawa, M. ; NTT Radio Commun. Syst. Lab., Kanagawa, Japan ; Yamaguchi, Y. ; Muraguchi, M.

A low-power-consumption variable-gain low noise amplifier (LNA) is developed. In order to achieve low noise, high gain, low distortion and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs (DFET) is employed. The amplifier shows state-of-the-art performance with NF of 2.0 dB, gain of 12.2 dB and IP3 of 5.1 dBm at 1.9 GHz at power consumption of 2.0 mW, and NF of 2.4 dB, gain of 10.2 dB and IP3 of 2.7 dBm at 1 mW. Moreover, the LNA's gain is controllable according to the receiving level and it can be turned off while the transmitter is operating.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Date of Conference:

10-13 Oct. 1993