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In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMT with improved device reliability

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4 Author(s)
C. -S. Wu ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Y. -J. Chan ; J. -L. Shien ; J. -I. Chyi

A novel In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.477As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak gm, of 295 mS/mm, an fT of 35 GHz, and an fmax of 76 GHz with a gate length of 0.8 μm. Furthermore. After 36 h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT. Which is a better result than obtainable in conventional InP HEMTs

Published in:

Electronics Letters  (Volume:31 ,  Issue: 13 )