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1.1 V high speed, low power BiCMOS logic circuit

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2 Author(s)
Yeo Kiat Seng ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; Rofail, S.S.

A 1.1 V full switching high speed, low power BiCMOS logic circuit is presented. It consists of nine devices and uses a noncomplementary BiCMOS process. Bootstrapping and partial charge removal techniques are employed. HSPICE simulations have shown that the new circuit outperforms both CMOS and a recently reported circuit in terms of speed and power-delay product. An analytical expression relating the pull-up delay with its device parameters is also derived

Published in:
Electronics Letters  (Volume:31 ,  Issue: 13 )

Date of Publication: 22 Jun 1995

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