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Lasing quantum well optoelectronic switch (OWOES) based on AlGaAs/GaAs/lnGaAs double heterostructure

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3 Author(s)
K. F. Yarn ; Dept. of Electr. Eng., Nan-Tai Jr. Coll. of Technol., Tainan, Taiwan ; Y. H. Wang ; M. S. Chen

A lasing quantum well optoelectronic switch (QWOES) based on a forward biased pn junction is demonstrated in an AlGaAs/GaAs/lnGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η, (=VS/VH ) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-state and ON-state resistances of 120 kΩ and 25 kΩ, respectively, were obtained. The lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in an as-cleaved device are 210 A/cm2. 0.4 mW/mA and 31.4%, respectively. The peak emission wavelength is centred at ~974 nm

Published in:

Electronics Letters  (Volume:31 ,  Issue: 13 )