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Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD

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5 Author(s)
Lammert, R.M. ; Microelectron. Lab., Illinois Univ., Urbana, IL, USA ; Smith, G.M. ; Forbes, D.V. ; Osowski, M.L.
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Design, fabrication, and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to ~325 mW/facet (4 μm wide output aperture), which is a >40% increase over conventional SAE-BH lasers

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Electronics Letters  (Volume:31 ,  Issue: 13 )