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Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells

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7 Author(s)
Chua, C.L. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Lin, C.H. ; Zhu, Z.H. ; Lo, Y.H.
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We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 /spl Aring/-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate. We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors. The optically-pumped device has a low threshold pump power of 4.2 kW/cm2 at room temperature and operates at a wavelength of 1.44 μm.

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 12 )