Referenced Items are not available for this document.
A 1.3-/spl mu/m wavelength, strained multiple quantum well InGaAsP-InP folded-cavity surface-emitting laser was fabricated using CH/sub 4/:H/sub 2/ reactive ion etching to form the 45/spl deg/ angled vertical output facet. A pulsed threshold current of 45 mA and a 20% efficiency for the surface-emitted light were achieved for 550 /spl mu/m-long by 5 /spl mu/m-wide devices. The threshold current is the lowest reported for folded-cavity surface-emitting lasers operating at this wavelength, making the devices suitable for many optoelectronic smart pixel and interconnection applications. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH/sub 4/:H/sub 2/ reactive ion etching.<
Published in:
Photonics Technology Letters, IEEE
(Volume:6
,
Issue:
12
)
Date of Publication: Dec. 1994
- Page(s):
- 1406 - 1408
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4862145
- Digital Object Identifier :
- 10.1109/68.392229
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1994
- Sponsored by :
- IEEE Photonics Society
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