By Topic

Finite element analysis of SiGe heterojunction devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Krishna, G.H.R. ; Dept. of Electron. & Electr. Commun. Eng., Inst. of Technol., Kharagpur, India ; Aditya, A.K. ; Chakrabarti, N.B. ; Banerjee, S.

Two SiGe devices, a n+-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device characteristics on the various Ge mole-fraction material parameters has been studied. The variation of current gain of SiGe HBT with temperature is discussed

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:14 ,  Issue: 7 )