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A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications

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5 Author(s)
Shum, D.P. ; Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA ; Hsing-Huang Tseng ; Paulson, W.M. ; Ko-Min Chang
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We have developed a process sequence for a flash EEPROM memory embedded in an advanced microcontroller circuit. This process simultaneously forms a thick top oxide on the interpoly ONO dielectric in the memory array and a stacked gate-oxide for the logic transistors. We have fabricated one-transistor, flash bit-cells with good data retention characteristics that incorporate a 17 nm ONO film along with high-quality stacked gate oxides

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 7 )