By Topic

Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Udrea, F. ; Dept. of Eng., Cambridge Univ., UK ; Amaratunga, G.

An accurate and comprehensive comparison between DMOS and Trench technologies for Insulated Gate Bipolar Transistors (IGBT) is presented. The study is performed using extensive two-dimensional numerical simulations and fundamental physical modeling. Various phenomena such as the influence of the channel density on the forward voltage drop and the effect of the channel mobility degradation on the on-state characteristics have been the object of controversial studies. The analysis performed here describes rigorously these phenomena and accounts for new physical effects such as the channel length modulation and PIN diode carrier dynamics. It is concluded that at relatively high voltage and high current densities (>100 A/cm2) an optimally designed Trench IGBT results in significant theoretical advantages over its conventional DMOS variant, mainly due to an increased packing density, PIN diode effect, reduced latch-up current density and elimination of the JFET effect

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 7 )