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Temperature and electric field characteristics of time-dependent dielectric breakdown for silicon dioxide and reoxidized-nitrided oxides

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3 Author(s)
Chi-Hung Lin ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Cable, J. ; Woo, J.C.S.

TDDB characteristics of 150 Å reoxidized nitrided oxide (ONO) gate dielectrics were examined at temperatures from 77 K to 400 K. These ONO films were processed with different conditions of rapid thermal nitridation (RTN) and rapid thermal re-oxidation (RTO). Optimized ONO films show better Qbd performance while maintaining a similar temperature and electric field dependence compared to SiO2. The low temperature activation energy for ONO and SiO2 is found to be strongly temperature dependent, and the charge to breakdown, Qbd, is closely related to the electron trap generation/trapping rate rather than the amount of hole trapping for high field stress. To further verify the effect of hole trapping on TDDB, X-ray irradiation was applied to wafers at different process steps. The results clearly show that the amount of hole trapping does not correlate with the charge to breakdown

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 7 )