By Topic

Analytical circuit model for thin film electroluminescent devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Ylilammi, M. ; VTT Electron., Espoo, Finland

A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF2, SrF2, ZnF2 and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 7 )