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A silicon electrostatic ultrasonic transducer

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3 Author(s)
Suzuki, K. ; NEC Corp., Kanagawa, Japan ; Higuchi, K. ; Tanigawa, H.

An electric ultrasonic transducer is developed by using a silicon IC process. Design considerations are first presented to obtain high sensitivity and the desired frequency responses in air. The measured transmitter sensitivity is 19.1 dB (0 dB=1 mu bar/V) at a point 50 cm away from the devices, when the devices are operated at 150 kHz. The receiving sensitivity is 0.47 mV/Pa in the 10-130-kHz range, with bias voltages as low as 30 V. An electronic sector scanning operation is also achieved by time-sequentially driving seven elements arranged in a linear array on the same chip. The results should be helpful in the design of phased-array transducers integrated with electronic scanning circuits.<>

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Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:36 ,  Issue: 6 )