I-V characteristics by radial tunneling in double-barrier tunneling diodes with cylindrical barriers

Radial tunneling transport in a double-barrier tunneling diode (DBTD) with cylindrical barriers has been theoretically studied. Calculations use a generalization of the transfer matrix method. Fine oscillation is demonstrated in transmission spectra and I-V characteristics. It is attributed to the coherence of traveling waves associated with cylindrical geometry. Various Al/sub x/Ga/sub 1-x/As-GaAs DBTD's with cylindrical barriers have been examined at absolute zero and room temperatures. Results are compared with DBTD's with planar geometry. It is recognized that different bias direction induces asymmetric I-V characteristics. Devices that operate on this inborn asymmetry are proposed. The device characteristics could be less sensitive to temperature than that of planar structures due to the fundamental operation principle. The results are useful to understand charge transport by the fast tunneling in quantum-well and superlattice structures with different geometries.<
>