By Topic

High performance InGaAsP/InP strained-layer MQW lasers with reversed-mesa ridge-waveguide structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
M. Aoki ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; M. Komori ; T. Tsuchiya ; H. Sato
more authors

Compressively-strained InGaAsP/InP MQW lasers with a simple reversed-mesa ridge-waveguide structure attain 300 mW output and high temperature lasing operation up to 165°C

Published in:

Electronics Letters  (Volume:31 ,  Issue: 12 )