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Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes

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4 Author(s)

The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n+p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics. It is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface

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Electronics Letters  (Volume:31 ,  Issue: 12 )