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Low resistance 1.55 μm InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure

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7 Author(s)
Matsumoto, S. ; NTT Opto-Electron. Labs., Atsugi, Japan ; Iga, R. ; Kadota, Y. ; Yamamoto, M.
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An InGaAsP (λg=1.3 μm) buffer layer, inserted between an InGaAs contact layer and an InP cladding layer, efficiently reduces the differential resistance of laser diodes at a threshold current of 10 mA. Laser diodes using this multilayer contact structure show long-term stable operation of more than 104 h at 50°C

Published in:

Electronics Letters  (Volume:31 ,  Issue: 11 )