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Optoelectronic integrated receivers on InP substrates by organometallic vapor phase epitaxy

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4 Author(s)
G. Sasaki ; Sumitomo Electr. Ind., Yokohama, Japan ; K. -I. Koike ; N. Kuwata ; K. Ono

The monolithic integrated ion of a p-i-n photodiode and a high-electron mobility transistor (HEMT) amplifier on an InP substrate by organometallic vapor-phase epitaxy is discussed. The receiver operated with up to 1.6 Gb/s nonreturn-to-zero optical signals. The responsivity was 1 kV/W and the minimum optical power at a bit error rate of 10-9 was -24 dBm for 400 Mb/s nonreturn-to-zero optical signals

Published in:

Journal of Lightwave Technology  (Volume:7 ,  Issue: 10 )