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A comparison of planar doped barrier diode performance versus Schottky diode performance in a single balanced, MIC mixer with low LO drive

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2 Author(s)
Poelker, J.N. ; Hughes Missile Syst. Co., Canoga Park, CA, USA ; Robertson, R.

This paper demonstrates that an unbiased GaAs planar doped barrier (PDB) diode, single balanced, Ku-band mixer achieves conversion loss performance comparable to a bias-optimized GaAs Schottky design at low local oscillator (LO) power levels for identical RF circuits. An experimental, side-by-side, performance comparison as a function of LO power is presented along with a harmonic balance (HB) simulation. The PDB diode is of interest for its zero-bias requirement and the high pulsed peak power handling potential for low-cost radars

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 6 )