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The dependence of the maximum operating temperature of long wavelength semiconductor lasers on physical and material device parameters

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2 Author(s)
Evans, J.D. ; Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada ; Simmons, J.G.

An new expression relating the theoretical maximum operating temperature, T/sub max/, of an InGaAsP-InP-based laser to adjustable device structural and material parameters, such as the cavity length, L, facet reflectivity R, transparency current density, J/sub th/, and the modal gain coefficient /spl beta/, is presented. The validity of this relationship is demonstrated through an examination of empirical results on two sets of unstrained multiple quantum-well (MQW) laser structures with different QW widths.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 6 )