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Recovery of low temperature electron trapping in AlGaAs/InGaAs PM-HEMTs due to impact-ionization

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5 Author(s)
Meneghesso, G. ; Dipartimento di Elettronica e Inf., Padova Univ., Italy ; De Bortoli, Eros ; Paccagnella, A. ; Zanoni, E.
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The dc behavior of AlGaAs/InGaAs PM-HEMTs has been Investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: (a) a dramatic collapse in the drain current I/sub D/, and (b) a considerable shift in the threshold voltage V/sub T/. I/sub D/ decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for V/sub T/ shift. At high V/sub DS/ a recovery of the dc device characteristics is observed, due to impact-ionization phenomena.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 7 )