Referenced Items are not available for this document.
The dc behavior of AlGaAs/InGaAs PM-HEMTs has been Investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: (a) a dramatic collapse in the drain current I/sub D/, and (b) a considerable shift in the threshold voltage V/sub T/. I/sub D/ decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for V/sub T/ shift. At high V/sub DS/ a recovery of the dc device characteristics is observed, due to impact-ionization phenomena.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
7
)
Date of Publication: July 1995
- Page(s):
- 336 - 338
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5000988
- Digital Object Identifier :
- 10.1109/55.388726
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1995
- Sponsored by :
- IEEE Electron Devices Society
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