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Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications

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5 Author(s)
Han, L.K. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Wristers, D. ; Yan, J. ; Bhat, M.
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In this paper, we demonstrate the superior diffusion barrier properties of NO-nitrided SiO/sub 2/ in suppressing boron penetration for p/sup +/-polysilicon gated MOS devices. Boron penetration effects have been studied in terms of flatband voltage shift, decrease in inversion capacitance (due to polysilicon depletion effect), impact on interface state density, and charge-to-breakdown. Results show that NO-nitrided SiO/sub 2/, as compared to conventional thermal SiO/sub 2/, exhibits much higher resistance to boron penetration, and therefore, is very attractive for surface channel PMOS technology.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 7 )

Date of Publication:

July 1995

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