Referenced Items are not available for this document.
Experimental evidence of an increase in the resistance of a cathode-side metal line without any void generation is presented for a multilayered metal structure terminated by via-holes during electromigration tests. This resistance increase is reversed to the initial value by high temperature storage after electromigration testing. The increase in the resistance of multilayered metal structures is attributed to the vacancy accumulation in the cathode side due to the blocking barrier effect of the refractory metal layer in the via-hole.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
7
)
Date of Publication: July 1995
- Page(s):
- 298 - 300
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5000975
- Digital Object Identifier :
- 10.1109/55.388713
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1995
- Sponsored by :
- IEEE Electron Devices Society
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