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Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions

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9 Author(s)
Kurokawa, M. ; Dept. of Phys., Rikkyo Univ., Tokyo, Japan ; Motobayashi, T. ; Ieki, K. ; Shimoura, S.
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Ion-implanted silicon detectors were irradiated with 18-150 MeV 16O, 20 MeV 40Ar, and 53 MeV 110Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2×108 cm-2. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies

Published in:

Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 3 )

Date of Publication:

Jun 1995

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