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Semiconductor pressure sensor based on FET structure

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3 Author(s)
Lysko, J.M. ; Inst. of Electron Technol., Warsaw, Poland ; Jachowicz, Ryszard S. ; Krzycki, M.A.

A construction of a new silicon pressure sensor based on n-type FET and fabrication of the structure by one-side surface micromachining techniques, are presented. Some mechanoelectric parameters were both tested and simulated with the use of the finite difference method. The sensor integration with the standard field-effect transistor was proposed for temperature compensation

Published in:

Instrumentation and Measurement, IEEE Transactions on  (Volume:44 ,  Issue: 3 )

Date of Publication:

Jun 1995

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