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Study on hydrogenation of polysilicon thin film transistors by ion implantation

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4 Author(s)
Min Cao ; Center for Integrated Syst., Stanford Univ., CA, USA ; Tiemin Zhao ; Saraswat, K.C. ; Plummer, James D.

Hydrogenation of polysilicon (poly-Si) thin film transistors (TFT's) by ion implantation has been systematically studied. Poly-Si TFT performance was dramatically improved by hydrogen ion implantation followed by a forming gas anneal (FGA). The threshold voltage, channel mobility, subthreshold swing, leakage current, and ON/OFF current ratio have been studied as functions of ion implantation dose and FGA temperature. Under the optimized conditions (H+ dose of 5×1015 cm-2 and FGA temperature at 375°C), NMOS poly-Si TFT's fabricated by a low temperature 600°C process have a mobility of ~27 cm 2/V·s, a threshold voltage of ~2 V, a subthreshold swing of ~0.9 V/decade, and an OFF-state leakage current of ~7 pA/μm at VDS=10 V. The avalanche induced kink effect was found to be reduced after hydrogenation

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 6 )