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An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
6
)
Date of Publication: Jun 1995
- Page(s):
- 1059 - 1064
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4969326
- Digital Object Identifier :
- 10.1109/16.387237
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1995
- Sponsored by :
- IEEE Electron Devices Society
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