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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:42 Issue:6 Help

2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET's

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4 Author(s)
Voinigescu, S.P. ; Microelectron. Center, Northern Telecom Ltd., Nepean, Ont., Canada ; Rabkin, P.B. ; Salama, C.A.T. ; Blakey, P.A.

Computer simulation is used to establish the impact of design parameters on the subthreshold characteristics, hot carrier injection, and high frequency performance of Si-SiGe FET's. The results indicate that by fully grading the Ge content in the channel of a MOSFET, short channel effects are reduced and high frequency performance is improved as compared to devices with uniform Ge channels. A cutoff frequency of 38 GHz and a maximum frequency of oscillation of 160 GHz are predicted for fully graded p-channel MOSFET's with 0.25 μm gate lengths. Energy balance simulation reveals that hot carrier injection at the Si-SiO2 interface is considerably suppressed if a fully graded channel is employed

Published in:
Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 6 )

Date of Publication: Jun 1995

Page(s):
1039 - 1046
ISSN :
0018-9383
INSPEC Accession Number:
4969324
Digital Object Identifier :
10.1109/16.387235
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jun 1995
Sponsored by :
IEEE Electron Devices Society

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