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The impact of NMOSFET hot-carrier degradation on CMOS analog subcircuit performance

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2 Author(s)
Vei-Han Chan ; Microsystems Technol. Lab., MIT, Cambridge, MA, USA ; Chung, J.E.

This study presents some of the first experimental data on the impact of NMOSFET hot-carrier-induced degradation on CMOS analog subcircuit performance. Because of circuit design requirements, most NMOSFET's used for analog applications are biased in the saturation region with a low gate-to-source voltage. Under such operating conditions, in addition to interface states, significant numbers of hole traps are also generated inside the gate oxide. Because acceptor-type interface states are mostly unoccupied in the saturation region, hole traps are found to have a much more significant impact on analog NMOSFET device performance. The hot-carrier-induced degradation of analog subcircuit performance is also found to be quite sensitive to the particular circuit design and operating conditions. Circuit performance and reliability tradeoffs are examined

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 6 )