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All solid source molecular beam epitaxy growth of 1.35 μm wavelength strained-layer GaInAsP quantum well laser

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7 Author(s)
Toivonen, M. ; Dept. of Phys., Tampere Univ. of Technol., Finland ; Salokatve, A. ; Jalonen, M. ; Nappi, J.
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The first GaInAsP based laser diode grown by all solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 μm was prepared. A low threshold current density of 510 A/cm2 was obtained for a broad-area laser having a cavity length of 1300 μm

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Electronics Letters  (Volume:31 ,  Issue: 10 )