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High temperature characteristic T0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

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3 Author(s)
Ougazzaden, A. ; Lab. de Bagneux, France Telecom, Bagneux, France ; Mircea, A. ; Kazmierski, C.

A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130 A/cm2 per well. A high characteristic temperature of 117 K was obtained. To the authors' knowledge, this is the highest value for as-cleaved lasers at 1.3 μm on InP substrates

Published in:

Electronics Letters  (Volume:31 ,  Issue: 10 )

Date of Publication:

11 May 1995

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