Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

High temperature characteristic T0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ougazzaden, A. ; Lab. de Bagneux, France Telecom, Bagneux, France ; Mircea, A. ; Kazmierski, C.

A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130 A/cm2 per well. A high characteristic temperature of 117 K was obtained. To the authors' knowledge, this is the highest value for as-cleaved lasers at 1.3 μm on InP substrates

Published in:

Electronics Letters  (Volume:31 ,  Issue: 10 )