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We report the development of a V-band monolithic power amplifier based on 0.1 μm gate-length pseudomorphic HEMT's. The two-stage amplifier has demonstrated record performance at 60 GHz on the first design pass: 272 mW output power with 9.4 dB power gain and 24% power-added efficiency. The amplifier was designed for high-reliability communications applications, with passivation, good linearity and excellent thermal properties, and has been fabricated on 3-in. wafers with high yield and excellent uniformity-on one typical wafer, consistency of MMIC output power is better than /spl plusmn/0.5 dB with an associated total yield through RF test of 58%.